| 摘要 |
A plasma etching apparatus is provided to avoid a match defect between a coil and an etch chamber even if a PM(preventive maintenance) process for opening the cover of the etch chamber is performed. An electrostatic chuck(120) is included in an etch chamber(110). A cathode part(130) supplies a predetermined RF voltage to the electrostatic chuck. A plasma induction part(140) supplies a predetermined RF voltage to the etch chamber, disposed over the etch chamber. A quartz disk assembly part on which a conductive layer is coated is interposed between the etch chamber and the plasma induction part, including a dome-type quartz plate(151) and a copper layer(152) coated on the upper surface of the quartz plate.
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