| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of relieving defective cells even after chip bonding, and to provide a method of manufacturing the same. SOLUTION: This semiconductor storage device 1 is provided with: a memory IC chip 10 having a spare memory cell; a logic IC chip 20 to which the memory IC chip 10 is connected through an electrical bonding section 2; and a switching element section for switching the selecting operation of the spare memory cell from a defective memory cell. In this device, since the switching element section for switching the selection operation of the spare memory cell is arranged on a switching element section forming region 24 in the outside of a connection region with the memory IC chip 10 on the logic IC chip 20, processing or operation of the switching element section on the logic IC chip 20 after the bonding of the memory IC chip 10 enables the diffective cells to be relieved. COPYRIGHT: (C)2007,JPO&INPIT
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