| 摘要 |
A method for forming a memory cell and periphery circuit includes providing a substrate with a peripheral circuit region and a memory cell region. A mask layer is formed on the substrate to define multiple active regions in the peripheral circuit region and to define multiple channel regions in the memory cell region. Multiple field oxide layers are formed between the active areas, and Dopants are implanted in the substrate between the channel regions. Multiple inter-cell isolation layers are formed between the channel regions and the dopants are driven in the substrate to form buried diffusion regions. The mask layer is removed. A layer of electricity-storage material and multiple word lines are formed on the substrate in the memory cell region.
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