Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device

摘要

A light-emitting layer is provided on a substrate. A p-type semiconductor layer (24) is provided on the light-emitting layer. An upper electrode is provided on the p-type semiconductor layer (24). The upper electrode includes an Au thin film (10a) coming into contact with the p-type semiconductor layer (24) and an n-type transparent conductor film (10b) formed thereon. The n-type transparent conductor film (10b) is formed by laser ablation.