发明名称 Heterostructure resistor and method of forming the same
摘要 A heterostructure resistor comprises a doped region formed in a portion of a semiconductor substrate, the substrate comprising a first semiconductor material having a first natural lattice constant. The doped region comprises a semiconductor layer overlying the semiconductor substrate. The semiconductor layer comprises a second semiconductor material with a second natural lattice constant.
申请公布号 US7183593(B2) 申请公布日期 2007.02.27
申请号 US20030745831 申请日期 2003.12.24
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 YEO YEE-CHIA;LEE WEN-CHIN;KO CHIH-HSIN;GE CHUNG-HU;LIN CHUN-CHIEH;HU CHENMING
分类号 H01L29/86;H01L27/06;H01L29/02;H01L29/165;H01L29/205;H01L29/8605;H01L31/109 主分类号 H01L29/86
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