发明名称 |
Heterostructure resistor and method of forming the same |
摘要 |
A heterostructure resistor comprises a doped region formed in a portion of a semiconductor substrate, the substrate comprising a first semiconductor material having a first natural lattice constant. The doped region comprises a semiconductor layer overlying the semiconductor substrate. The semiconductor layer comprises a second semiconductor material with a second natural lattice constant.
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申请公布号 |
US7183593(B2) |
申请公布日期 |
2007.02.27 |
申请号 |
US20030745831 |
申请日期 |
2003.12.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YEO YEE-CHIA;LEE WEN-CHIN;KO CHIH-HSIN;GE CHUNG-HU;LIN CHUN-CHIEH;HU CHENMING |
分类号 |
H01L29/86;H01L27/06;H01L29/02;H01L29/165;H01L29/205;H01L29/8605;H01L31/109 |
主分类号 |
H01L29/86 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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