| 摘要 |
<p>A method for fabricating a semiconductor device using an epitaxial growth is provided to avoid abnormal growth of an epitaxial layer on the back surface of a wafer edge during a process for growing an epitaxial layer by performing a blanket etch process only an oxide layer deposited on the front surface of a wafer without forming a DUF(diffusion under film) pattern. A DUF oxide layer(310) and a DUF nitride layer(320) are sequentially deposited on the front and the back surfaces of a wafer(300). An oxide layer is deposited on the DUF nitride layer. The oxide layer is blanket-etched to expose the front surface of the DUF oxide layer. Photoresist is deposited on the back surface of the edge of the wafer. After the DUF nitride layer and the DUF oxide layer are blanket-etched to expose the front surface of the wafer, the oxide layer formed on the back surface of the wafer is stripped. An epitaxial layer(350) is grown on the front surface of the wafer. The oxide layer deposited on the DUF nitride layer is thicker than the DUF nitride layer by 2000 angstroms or more.</p> |
