| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device equipped with a semiconductor memory part, capable of achieving a large capacity, high-speed performance, and high reliability. <P>SOLUTION: This device is provided with a first cell block (3 transistor cell blocks) where a plurality of memory cell strings (MU) including a plurality of electrically rewritable memory cells disposed in a memory cell array 50 and one selection transistor which are serially connected are arrayed, and a second cell block (NAND type cell block) where a plurality of memory cell strings (MU) including a plurality of electrically rewritable memory cells disposed in the memory cell array 50 but different in number from the first cell block, and at least one selection transistor which are serially connected are arrayed. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
