| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element provided with a barrier metal spacer, and its manufacturing method. SOLUTION: A semiconductor element is provided with: a first metal line formed in a semiconductor substrate; an etch stop film provided with a via plug that is electrically connected with a part of the first metal line and containing a window; an interlayer insulating film comprising a via hole and a trench; and a first barrier metal spacer covering the sidewall of the interlayer insulating film in the via hole, to expose a part of the first metal line and at least the lower end of the sidewall of the etch stop film in the window. COPYRIGHT: (C)2007,JPO&INPIT |
