发明名称 Reducing gate dielectric material to form a metal gate electrode extension
摘要 In a metal gate replacement process, a cup-shaped gate metal oxide dielectric may have vertical portions that may be exposed to a reduction reaction. As a result of the reduction reaction, the vertical portions may be converted to metal, which adds to the existing gate electrode. In some cases, removing the vertical dielectric portions reduces fringe capacitance and may also advantageously slightly increased underdiffusion without adding heat, in some embodiments.
申请公布号 US2007040227(A1) 申请公布日期 2007.02.22
申请号 US20060586791 申请日期 2006.10.26
申请人 DATTA SUMAN;BRASK JUSTIN K;KAVALIEROS JACK;DOCZY MARK L;METZ MATTHEW;CHAU ROBERT S 发明人 DATTA SUMAN;BRASK JUSTIN K.;KAVALIEROS JACK;DOCZY MARK L.;METZ MATTHEW;CHAU ROBERT S.
分类号 H01L29/94;H01L21/28;H01L21/336;H01L21/8238;H01L29/423;H01L29/49;H01L29/51 主分类号 H01L29/94
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