摘要 |
<p>An integrated circuit arrangement (110) has a capacitor (150) having a ground electrode (208), a capacitor dielectric (209) and a cover electrode (210), in which the ground electrode consists of another material to that of the control structures. Several control/conduction structures (140) and their inter-spaces form, in comparison to a flat/even surface, the same outline/contour as the capacitor (150), about at least 30 per cent extended uneven surface, on which the capacitor (150) is arranged. An independent claim is included for a method for fabricating a capacitor in a conduction path layer.</p> |