发明名称 |
MAGNETO-ELECTRIC FIELD EFFECT TRANSISTOR FOR SPINTRONIC APPLICATIONS |
摘要 |
The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detect spin polarized electrons; and a gate comprising at least one magnetic double pair element comprising four magnetic elements each magnetic element being adapted to induce a magnetic field into the channel region, wherein the total induced magnetic field of the magnetic double pair element is controllable to be substantially zero, and wherein the gate is further adapted to induce an electrical field into the channel region. ® KIPO & WIPO 2007
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申请公布号 |
KR20070020255(A) |
申请公布日期 |
2007.02.20 |
申请号 |
KR20067024797 |
申请日期 |
2004.04.27 |
申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH AGENCY |
发明人 |
B. A. JALIL MANSOOR;TAN SENG GHEE;CHONG TOW CHONG;LIEW YUN FOOK;TEO KIE LEONG |
分类号 |
H01L21/335;H01F10/16;H01L29/66;H01L29/82 |
主分类号 |
H01L21/335 |
代理机构 |
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地址 |
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