PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS
摘要
A plasma chemical vapor deposition apparatus is provided to effectively disassemble a gas injection part supported on an upper portion of a chamber lead by connecting a chamber body with the chamber lead with a hinge part. A plasma chemical vapor deposition apparatus comprises a chamber body(10) having a desired reaction chamber and an access opening, a gas injection part(30) disposed in the reaction chamber for spraying a deposition gas, and a chamber lead(20) coupled to the chamber body by a first hinge part(90). The hinge part is pivoted between an open position for opening the access opening and a close position for closing the access opening. A cleaning gas supply unit(50) supplies a cleaning gas to the reaction chamber.
申请公布号
KR100686726(B1)
申请公布日期
2007.02.16
申请号
KR20050080836
申请日期
2005.08.31
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
JEONG, KYEONG SEOK;USHAKOV ANDREY;PARK, SEON MI;CHUNG, HWA JUN;KIM, EUNG SU