OXIDE CRYSTAL GROWTH APPARATUS AND FABRICATION METHOD USING THE SAME

摘要

A growth apparatus and a method for making a nitrogen (N)-doped oxide crystal grow can be configured to set a nitrogen concentration to a desired concentration and to make the concentration of nitrogen uniform in a depth direction. A nitrogen source gun configured to supply ammonia (NH₃) gas into an ultrahigh vacuum chamber can be arranged on a side of an ultrahigh vacuum chamber that is approximately opposite to a side that includes an exhaust port. A stage can be located between the nitrogen source gun and the exhaust port so as to form a flow path for ammonia that allows ammonia introduced into the ultrahigh vacuum chamber to be quickly exhausted after reaching a ZnO substrate placed on the stage. As a result, accumulation of ammonia in the ultrahigh vacuum chamber can be minimized, so that the nitrogen concentration in a crystal growth layer on the ZnO substrate can be set at a desired concentration and can be made uniform in the depth direction.