METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT- EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

A semiconductor light-emitting device and method for manufacturing the semiconductor light-emitting device includes a mask layer etching process on first and second mask layers provided on a Group-III nitride-based compound semiconductor substrate, the mask layer with a higher etching rate being closer to the p-type semiconductor layer; a semiconductor layer etching process; a side-etching process that selectively etches the side of the mask layer with the high etching rate to define a groove portion with a portion of the p-type semiconductor layer exposed; a ZrO₂ film forming process that forms a ZrO₂ film so as to cover the exposed p-type semiconductor layer; an Al₂O₃ film forming process that forms an Al₂O₃ film so as to cover the ZrO₂ film; a mask layer removing process; and an electrode layer forming process. The method for manufacturing the semiconductor light-emitting device increases the yield of lift-off with respect to the p-type semiconductor layer and can produce a semiconductor light-emitting device with an improved voltage resistance.