Capacitive element, method of manufacture of the same, and semiconductor device

摘要

A capacitive element is characterized by including: a base ( 12 ); a lower barrier layer ( 13 ) formed on the base ( 12 ); capacitors (Q₁ and Q₂) made by forming a lower electrode ( 14 a), capacitor dielectric layers ( 15 a), and upper electrodes ( 16 a) in this order on the lower barrier layer ( 13 ); and an upper barrier layer ( 20 ) covering at least the capacitor dielectric layers ( 15 a) and the lower barrier layer ( 13 ).