| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology of manufacturing a TFT with less deterioration in the characteristics, in manufacturing a p-channel TFT and an n-channel TFT on the same substrate. SOLUTION: A first and second resist masks used in forming a gate electrode for p-channel and n-channel TFTs are left; after that, a third resist mask 3 is formed on one of the p-channel and the n-channel TFT-forming regions. Then, first impurity ions 10 are doped by using the second and third resist masks 3, and a source region 11 and a drain region 12 are formed in one semiconductor film. Thereafter, the first resist mask, the second resist mask and the third resist mask are removed, and a fourth resist mask is formed on the other part of the p-channel and the n-channel TFT-forming regions. Then, the second impurity ions 14 are doped by using the fourth resist mask 13, and the source region 15 and the drain region 16 are formed on the other semiconductor film. COPYRIGHT: (C)2007,JPO&INPIT |
