| 摘要 |
PROBLEM TO BE SOLVED: To provide a growing apparatus and method, by which a larger-diameter silicon single crystal ingot larger than 200 mm as well as a middle or small diameter silicon single crystal ingot having a uniform oxygen concentration in a longitudinal direction can be produced based on a Czochralski method and the flower phenomenon generated on the growth of a single crystal can be completely controlled; and to provide wafers produced from the ingot. SOLUTION: A ZGP (Zero Gauss Plane) is placed at an upper portion of a silicon melt 12 by applying asymmetric magnetic fields along the axis direction of a chamber by coil members 16, 17 arranged at the outside of the growing apparatus of the silicon single crystal ingot 10 and controlling the ratio and intensity of the asymmetric magnetic fields by current control or the like without additional constitutive elements. COPYRIGHT: (C)2007,JPO&INPIT
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