METHOD AND APPARATUS FOR DETECTING FAILURES OF SEMICONDUCTOR DEVICE USING LASER SCAN

摘要

A method and apparatus for inspecting a failure of a semiconductor device by using a laser scan is provided to accurately analyze a defect by searching a defect position of a metal wiring or a via having weak minimum voltage characteristic. A voltage lower than a minimum voltage of a driving voltage range of an integrated circuit or a threshold voltage having a voltage within the driving voltage range is applied to the integrated circuit to determine an initial state of the integrated circuit. It determines a final state of the integrated circuit by irradiating laser onto a local region of the integrated circuit and simultaneously applying the threshold voltage to the integrated circuit. If the initial state or final state is determined as a defect, a defect portion is existed in the local area.