| 摘要 |
An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes: a first conductivity type substrate; a second conductivity type well region formed in a predetermined portion of the substrate; a gate structure including a gate insulation layer and a gate electrode stacked on a selected surface portion of the substrate and separated from the well region with a predetermined distance; a first conductivity type first diffusion region formed in the well region; a second conductivity type second diffusion region formed beneath another selected surface portion of the substrate contacting one side edge of the gate structure; and a second conductivity type third diffusion region, extending from the other side edge of the gate structure into the well region, and electrically connected to the first diffusion region through a resistor. |
