发明名称 POWER SUPPLY DEVICE
摘要 <p>Control signals, which control a MOSFET (Q1) of a power supply device (10) to be in an ON status and a MOSFET (Q2) of the power supply device to be in an OFF status, are given to gates of the MOSFETs (Q1, Q2) from a control circuit (11) during a standby time, respectively. An emitter of a pnp transistor (Q3) is connected to the gate of the MOSFET (Q2) through a diode (D6) of a switch circuit (1), and a collector is connected to the ground. A power supply operation control signal is inputted to a base of the pnp transistor (Q3), and when the power supply operation control signal in a Low status is inputted to the base during the standby time, an electricity is carried between the emitter and the collector. Thus, the gate of the MOSFET (Q2) is permitted to have a substantially a ground potential, and the MOSFET (Q2) is permitted to be in the OFF-status, not depending on the control signal.</p>
申请公布号 WO2007015520(A1) 申请公布日期 2007.02.08
申请号 WO2006JP315313 申请日期 2006.08.02
申请人 WATANABE, SOICHI;MURATA MANUFACTURING CO., LTD.;NISHI, KOJI;KUROKAWA, TAKASHI 发明人 NISHI, KOJI;WATANABE, SOICHI;KUROKAWA, TAKASHI
分类号 H02M3/155 主分类号 H02M3/155
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