发明名称 |
RF power transistor with impedance matched output electrode |
摘要 |
<p>A power transistor, having: a semiconductor having an electrode formed thereon, wherein the electrode comprises a plurality of interdigitated transistors each having input and output terminals; a first output blocking capacitor having a first terminal electrically coupled to the output terminals of the interdigitated transistors of the semiconductor and a second terminal electrically coupled to ground; and a second output blocking capacitor having a first terminal electrically coupled to the first terminal of the first output blocking capacitor and a second terminal electrically coupled to ground. A method for amplifying signals, the method having: forming a power transistor on a semiconductor, wherein the power transistor comprises a plurality of interdigitated transistors; shunting an output signal from the plurality of interdigitated transistors; and double-shunting an output signal from the plurality of interdigitated transistors, wherein the shunting and double-shunting generates first and second harmonic terminations at a die plane of the power transistor.</p> |
申请公布号 |
EP1750298(A2) |
申请公布日期 |
2007.02.07 |
申请号 |
EP20060015435 |
申请日期 |
2006.07.25 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BLAIR, CYNTHIA;DIXIT, NAGARAJ VISHWANATH;MOLLER, THOMAS W.;PHAM, TAN |
分类号 |
H01L21/66;H01L23/50;H01L23/66;H03F1/56 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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