| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can thin the SiO<SB>2</SB>equivalent film thickness of a gate insulating film. SOLUTION: This semiconductor device contains a semiconductor substrate, a gate insulating film formed on the above semiconductor substrate; and a gate electrode formed on the above gate insulating film which not only contains amorphous or polycrystalline Si<SB>1-x</SB>Ge<SB>x</SB>(0≤x<0.25) as a major element, but also contains p-type impurities in a way that they replace silicon atoms. In this device, the p-type impurities positioned in a way that they replace the above silicon atoms of the above gate electrode contain a first p-type impurity with a density greater than or equal to 5×10<SP>19</SP>/cm<SP>3</SP>, but less than or equal to 5×10<SP>20</SP>/cm<SP>3</SP>, a second p-type impurity whose atom radius is smaller than that of the first p-type impurity and furthermore the first p-type impurity and second p-type impurity are covalently bound. COPYRIGHT: (C)2007,JPO&INPIT
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