| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can improve connection reliability at a connection hole. SOLUTION: The manufacturing method of the semiconductor device comprises steps of forming wiring 20 on a first insulation film 10, forming a second insulation film 30 on the first insulation film 10 and on the wiring 20, forming the connection hole 30a located on the wiring 20 in the second insulation film 30, forming a coating film 31 on the side face of the connection hole 30a by sputtering the wiring 20 located on the bottom of the connection hole 30a, forming a barrier film 41 on the second insulation film 30 and on the coating film 31, and embedding a conductive film 42 in the connection hole 30a. COPYRIGHT: (C)2007,JPO&INPIT
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