| 摘要 |
PROBLEM TO BE SOLVED: To reduce a manufacturing cost and realize an increase in yield by reducing the number of processes for manufacturing a TFT in an electro-optic device and a semiconductor device, typified by a liquid crystal display device of active matrix type. SOLUTION: A first interlayer insulating layer made of an inorganic material on a TFT of reversely-staggered type, a second interlayer insulating layer made of an organic material formed on the first interlayer insulating film, and a pixel electrode formed adjacent to the second interlayer insulating layer are provided on a substrate, and the end part of the substrate has an input terminal part that electrically connects to a wire on another substrate and the input terminal part is characterized by being formed by a first layer made of the same material as that of a gate electrode and a second layer made of the same material as that of the pixel electrode. With such a configuration, the number of photo masks used in the photolithography technique can be made five. COPYRIGHT: (C)2007,JPO&INPIT |
