发明名称 |
THIN-FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR, AND DISPLAY USING THIN-FILM TRANSISTORS |
摘要 |
The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.
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申请公布号 |
US2007026619(A1) |
申请公布日期 |
2007.02.01 |
申请号 |
US20060428477 |
申请日期 |
2006.07.03 |
申请人 |
NAKAZAKI YOSHIAKI;KAWACHI GENSHIRO;WARABISAKO TERUNORI;MATSUMURA MASAKIYO |
发明人 |
NAKAZAKI YOSHIAKI;KAWACHI GENSHIRO;WARABISAKO TERUNORI;MATSUMURA MASAKIYO |
分类号 |
H01L21/336;H01L21/00;H01L21/84 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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