| 摘要 |
A thin film transistor substrate and a method for manufacturing the same are provided to simplify manufacture by forming an organic semiconductor layer and a first passivation film, and reduce deterioration of properties of the organic semiconductor layer by omitting a process using a plasma or chemical material after forming the organic semiconductor layer. A thin film transistor substrate includes an insulation substrate, gate lines(141) formed on the insulation substrate, a first gate insulator film formed of an inorganic material on the gate lines, having first insulator film contact holes exposing at least a part of the gate lines, a second gate insulator film formed of an organic material on the first gate insulator film, having second insulator film contact holes(156,157,158) corresponding to the first insulator film contact holes. Source and drain electrodes(161,163) are separately formed on the second gate insulator film for defining a channel area. An organic semiconductor layer(170) is formed on the channel area.
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