发明名称 METHOD AND APPARATUS FOR REPAIR AND TRIMMING IN FLASH MEMORY DEVICE
摘要 A repair and trimming method of a flash memory device and an apparatus thereof are provided to reduce process time without a repair process by cutting a fuse, and to increase yield by enabling repair and trimming of a proceeding defect generated during a test step, under a mounted environment and after a packaging process. A memory device includes a nonvolatile memory cell array(10). An error correction circuit(20) corrects an error of first fuse data stored in the nonvolatile memory cell array and then outputs second fuse data. The second fuse data is stored in a fuse register(30). The first fuse data includes a first data field for defect relief and voltage trimming and a second data field for correcting an error of the first data field.
申请公布号 KR20070013110(A) 申请公布日期 2007.01.30
申请号 KR20050067478 申请日期 2005.07.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, SANG WON;YOUN, DONG KYU
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
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