| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode of high brightness excellent in antistatic characteristics. <P>SOLUTION: The light emitting diode comprises a substrate, a compound semiconductor layer including a light emitting part of pn junction which is formed on the substrate, and a conductor, provided on the compound semiconductor layer, of a material which is conductive and optically transparent for emission from the light emitting part. The diode has a high resistance layer having higher resistance than the conductor between the compound semiconductor layer and the conductor. When constituting a light emitting diode lamp, the potential of an electrode provided on the semiconductor layer on the side opposite to the conductor with the light emitting layer between is made to be equal to the potential of the conductor by wire connection. <P>COPYRIGHT: (C)2007,JPO&INPIT |
