Dual gate electrode metal oxide semciconductor transistors

摘要

A semiconductor product includes a pair of field effect transistor device structures formed one each within a pair of doped well regions within a semiconductor substrate. The pair of field effect transistor device structures is formed with a pair of metal gate electrodes formed employing different laminated metal constructions. By correlating a work function within a metal layer within a gate electrode with a work function of a semiconductor substrate region over which it is formed, the field effect transistor devices are formed with enhanced performance.