| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure of a two-layer resist for obtaining a half exposure pattern with high sensitivity and high accuracy, and to provide a manufacturing method of a display apparatus provided with thin film transistors formed by using the two-layer resist. <P>SOLUTION: The resist 12 comprises five layers: a base film 11, a cushion layer 10, an upper layer resist 8, a lower layer resist 7, and a cover film 9. The thickness of each structural member, that is, the thickness of the base film 11 is 50 to 100 μm, the thickness of the cushion layer 10 is 10 to 30 μm, the thickness of the upper layer resist 8 is 0.5 to 1.0 μm, the thickness of the lower layer resist 7 is 0.5 to 1.0 μm, and the thickness of the cover film 9 is 10 to 30 μm. <P>COPYRIGHT: (C)2007,JPO&INPIT |
