| 发明名称 |
VERTICAL CONDUCTING POWER SEMICONDUCTING DEVICES MADE BY DEEP REACTIVE ION ETCHING |
| 摘要 |
The Invention Is A Method For Making Power Device On A Semiconductor Wafer, Where The Backside Of The Wafer Has Been Thinned In Selected Regions To A Thickness Of About 25 Um By Reactive Ion Etching.
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| 申请公布号 |
US2007018179(A1) |
申请公布日期 |
2007.01.25 |
| 申请号 |
US20060534310 |
申请日期 |
2006.09.22 |
| 申请人 |
KUB FRANCIS J;HOBART KARL D |
发明人 |
KUB FRANCIS J.;HOBART KARL D. |
| 分类号 |
H01L33/00;H01L21/331;H01L29/06;H01L29/417;H01L29/739;H01L29/78;H01L29/868;H01L29/872;H01L31/00 |
主分类号 |
H01L33/00 |
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