METHOD FOR MACHINING A SEMICONDUCTOR WAFER ON BOTH SIDES IN A CARRIER, CARRIER AND A SEMICONDUCTOR WAFER PRODUCED BY THE METHOD

摘要

A method for processing both surfaces of a semiconductor wafer in a cassette is provided to reduce a semiconductor wafer to a target thickness by simultaneously removing materials from front and back surfaces of a semiconductor wafer while the semiconductor wafer is mounted on a cutout formed in a cassette so as to be guided. A semiconductor wafer is processed until the thickness of the wafer becomes smaller than a carrier body(3) and greater than an inlay(2) used for aligning the semiconductor wafer in a cutout(1) of the carrier to protect the semiconductor wafer. The semiconductor wafer can be processed until a material having a thickness not smaller than 5 micrometers is removed.