发明名称 |
SEMICONDUCTOR DEVICE AND A METHOD FOR PRODUCTION THEREOF |
摘要 |
<p>A semiconductor device comprises a first layer (1) of a wide band gap semiconductor material doped according to a first conductivity type and a second layer (3) on top thereof designed to form a junction blocking current in the reverse biased state of the device at the interface to said first layer. The device comprises extension means for extending a termination of the junction laterally with respect to the lateral border (6) of the second layer. This extension means comprises a plurality of rings (16-21) in juxtaposition laterally surrounding said junction (15) and being arranged as seen in the lateral direction away from said junction alternatively a ring (16-18) of a semiconductor material of a second conductivity type opposite to that of said first layer and a ring (19-21) of a semi-insulating material.</p> |
申请公布号 |
WO2007011294(A1) |
申请公布日期 |
2007.01.25 |
申请号 |
WO2006SE00902 |
申请日期 |
2006.07.20 |
申请人 |
CREE, INC.;HARRIS, CHRISTOPHER;BASCERI, CEM |
发明人 |
HARRIS, CHRISTOPHER;BASCERI, CEM |
分类号 |
H01L29/06;H01L21/20;H01L21/22;H01L21/26 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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