发明名称 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME AND CAMERA
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device by which optional optical characteristic is provided at a low cost, and also to provide its manufacturing method and a camera. <P>SOLUTION: When a multilayer interference filter is formed as constituting a solid-state imaging device, a titanium dioxide layer 401, a silicon dioxide layer 402, a titanium dioxide layer 403, and a spacer layer 404 are stacked on an interlayer insulating film 304 in order, so as to form a lower film. The reflectivity characteristic of the lower film is measured and its film thickness is specified. If the measured value differs from a design value, film thicknesses are changed in the spacer layer 404, titanium dioxide layers 407 and 409 as an upper film, and silicon dioxide layers 408 and 410. The film thickness of the spacer layer 404 is adjusted by etching on the basis of the change, and then the upper film is formed thereon. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007019143(A) 申请公布日期 2007.01.25
申请号 JP20050197249 申请日期 2005.07.06
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 INABA YUICHI;KASANO SHINKO
分类号 H01L27/14;G02B5/20;G02B5/28;H04N5/335;H04N5/369 主分类号 H01L27/14
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