发明名称 |
Monolithically integrated vertical pin photodiode used in bicmos technology |
摘要 |
The invention relates to a monolithically integrated vertical pin photodiode which is produced according to BiCMOS technology and comprises a planar surface facing the light and a rear face and anode connections located across p areas on a top face of the photodiode. An i-zone of the pin photodiode is formed by combining a low doped first p-epitaxial layer, which has maximum thickness and doping concentration, placed upon a particularly high doped p substrate, with a low doped second n<SUP>-</SUP> epitaxial layer that borders the first layer, and n<SUP>+</SUP> cathode of the pin photodiode being integrated into the second layer. The p areas delimit the second n epitaxial layer in a latent direction while another anode connecting area of the pin diode is provided on the rear face in addition to the anode connection.
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申请公布号 |
US2007018268(A1) |
申请公布日期 |
2007.01.25 |
申请号 |
US20030534304 |
申请日期 |
2003.11.12 |
申请人 |
X-FAB SEMICONDUCTOR FOUNDRIES AG |
发明人 |
EINBRODT WOLFGANG;ZIMMERMAN HORST;FOERTSCH MICHAEL |
分类号 |
H01L31/00;H01L21/00;H01L21/8249;H01L31/0224;H01L31/0352;H01L31/105 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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