发明名称 METHOD FOR SEPARATING TWO MATERIAL LAYERS
摘要 A semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure. The semiconductor body is transferred from a growth substrate to a support material by: exposing an interface between the growth substrate and the semiconductor body or a region in the vicinity of said interface to electromagnetic radiation through one of the semiconductor body and the growth substrate; decomposing a material at or in proximity to said interface by absorption of the electromagnetic radiation in proximity to or at said interface so that the semiconductor body can be separated from the growth substrate; and connecting the semiconductor body to the support material.
申请公布号 EP0931332(B1) 申请公布日期 2007.01.24
申请号 EP19970911125 申请日期 1997.10.01
申请人 OSRAM OPTO SEMICONDUCTORS GMBH & CO. OHG 发明人 KELLY, MICHAEL, K.;AMBACHER, OLIVER;STUTZMANN, MARTIN;BRANDT, MARTIN, S.;DIMITROV, ROMAN;HANDSCHUH, ROBERT
分类号 G02B6/13;H01L21/268;G02B5/18;H01L21/02;H01L21/027;H01L21/26;H01L21/60;H01L21/68;H01L21/78;H01L33/00;H01S5/323 主分类号 G02B6/13
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