| 发明名称 |
PROCESS FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process for fabricating a highly reliable thin film semiconductor device at a low cost, and to provide a semiconductor device fabricated by that process. <P>SOLUTION: After a stripping layer is formed on a substrate, a transistor is fabricated on the stripping layer, and an insulator is formed on the transistor, an opening is formed to expose a part of the stripping layer and the transistor is stripped from the substrate by a physical means. The stripping layer is formed by forming a metal film on the substrate and then forming a metal oxide film on the metal film in contact therewith by a method using solution. <P>COPYRIGHT: (C)2007,JPO&INPIT |
| 申请公布号 |
JP2007013108(A) |
申请公布日期 |
2007.01.18 |
| 申请号 |
JP20060137158 |
申请日期 |
2006.05.17 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
OGITA KO;TAMURA TOMOKO;MARUYAMA JUNYA;ORIKI KOJI |
| 分类号 |
H01L21/02;G06K19/07;G06K19/077;H01L21/336;H01L27/12;H01L29/786 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
