SEMICONDUCTOR STRUCTURE FOR TRANSISTORS WITH ENHANCED SUBTHRESHOLD SWING AND METHODS OF MANUFACTURE THEREOF

摘要

The semiconductor device (100) comprises a substrate structure (104); a gate stack (102) formed on said substrate structure (104); a drain region (122) of a first dopant type formed in the substrate structure (104) adjacent said gate stack (102); a source structure (126) formed on said substrate structure (104) adjacent said gate stack (102), the source structure (126) comprising a source region (132) of a second dopant type and a first region of a dopant concentration below 10<SUP>18</SUP> cm<SUP>-3</SUP> disposed between the source region (132) and the substrate structure (104). The impact ionization metal-oxide semiconductor (IMOS) device has application as an inverter or integration into integrated circuit chips.