发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To enhance an electric characteristic of a thin film probe having a probe needle formed by a production technique of a semiconductor integrated circuit device. SOLUTION: A wire 23G connected electrically to a reference potential (grounding potential) is arranged between a plurality of wires 23S used for transmitting a signal, out of the plurality of wires 23 formed in a thin sheet, and a pattern is formed to be extended to the vicinity of the probes 7A, 7B as much as possible. The wires 23P of a plurality of electric power source systems connected electrically to an electric power source in the same line are formed into a pattern connected each other, out of the plurality of wires 23. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007010600(A) 申请公布日期 2007.01.18
申请号 JP20050194561 申请日期 2005.07.04
申请人 RENESAS TECHNOLOGY CORP 发明人 HASEBE AKIO;OKAMOTO MASAYOSHI;NARIZUKA YASUNORI;YORISAKI SHINGO;MOTOYAMA YASUHIRO
分类号 G01R31/26;G01R1/073;H01L21/66 主分类号 G01R31/26
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