发明名称 IMAGE CENSOR ARRAY
摘要 An image sensor array is provided to use a CMOS(Complementary Metal Oxide Semiconductor) transistor included in plural image sensors as a component for an operational amplifier, thereby removing fixed pattern noise. An image sensor array comprises plural image sensors(100a,100b) and a common output unit(200) for composing an operational amplifier. The plural image sensors(100a,100b) comprises the followings: a photodiode(PD); a drive transistor(M2) which is connected to the photodiode(PD) and operates as a source follower; and a select transistor(M3) which is connected with the drive transistor(M2) in parallel, and is turned on when a selection signal is applied, and then operates the drive transistor(M2). The common output unit(200) is commonly connected to the plural image sensors(100a,100b), and includes a common input terminal which is differentially combined with the drive transistor(M2) and the select transistor(M3) of each image sensor(100a,100b), and to which a switching control signal synchronized with the selection signal is applied. The common output unit(200) decides a drive transistor(M2) and a select transistor(M3) of an image sensor(100a,100b), to which the selection signal is applied among the plural image sensors(100a,100b), as the first input terminal and decides the common input terminal as the second input terminal. The common output unit(200) converts an electron generated in the photodiode(PD) into a voltage signal and outputs the voltage signal to an output unit.
申请公布号 KR20070008264(A) 申请公布日期 2007.01.17
申请号 KR20050063353 申请日期 2005.07.13
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 PARK, DEUK HEE;CHOI, WON TAE;KANG, SHIN JAE;KO, JOO YUL
分类号 H04N5/365;H04N5/3745 主分类号 H04N5/365
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