| 摘要 |
A method for forming trench in a semiconductor device is provided to uniformly maintain an isolation characteristic by constantly controlling the depth of a trench regardless of the pattern density between devices. A pad pattern(110) is formed on a silicon substrate(100). A predetermined thickness of a poly hard mask is formed on the pad pattern to define a trench formation region. The poly hard mask is formed by using poly having the same etch property value as the silicon substrate. By using the poly hard mask as an etch mask, the pad pattern is etched to expose the upper surface of the substrate. An etch process is performed on the front surface of the substrate having the poly hard mask until the upper surface of the pad pattern is exposed, so that a trench(140) is formed which has the same depth as the thickness of the poly hard mask.
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