发明名称 ION SOURCE SECTION FOR ION IMPLANTATION EQUIPMENT
摘要 An ion source part of ion implanting equipment is provided to reduce money for preventive maintenance of an arc chamber by making the arc chamber have protection plates capable of being replaced. A reaction gas is supplied to an arc chamber(110) by a gas supply pipe. A filament discharges thermal electrons to form an ion beam from the reaction gas supplied to the arc chamber. Protection plates(301) are attached to the inner walls of the arc chamber. A source aperture member is detachably installed in the arc chamber, having an ion discharge hole through which the ion beam generated from the inside of the arc chamber is discharged and including a multilayered structure composed of a plurality of plates.
申请公布号 KR20070007621(A) 申请公布日期 2007.01.16
申请号 KR20050062354 申请日期 2005.07.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, SANG CHUL;EOM, HONG KUK;LEE, IN PYO
分类号 H01L21/265 主分类号 H01L21/265
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