发明名称 |
Method for slowing down dopant-enhanced diffusion in substrates and devices fabricated therefrom |
摘要 |
A method (and resulting structure) of forming a semiconductor device, includes implanting, on a substrate, a dopant and at least one species, annealing the substrate, the at least one species retarding a diffusion of the dopant during the annealing of the substrate.
|
申请公布号 |
US7163867(B2) |
申请公布日期 |
2007.01.16 |
申请号 |
US20030627753 |
申请日期 |
2003.07.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LEE KAM-LEUNG;ZHU HUILONG |
分类号 |
H01L21/336;H01L21/265;H01L21/324;H01L29/10 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|