| 摘要 |
A nonvolatile semiconductor memory includes a memory cell 6 composed of a memory cell transistor 1 having a floating gate and a control gate and a memory cell selecting transistor 2 , a reference cell 12 composed of a reference cell transistor 30 having the same structure as the memory cell transistor 1 and a reference cell selecting transistor 8 , and a reference word line potential generating circuit 31 connected to a gate of the reference cell selecting transistor 8 , wherein, in a reading operation, the same power supply voltage is applied between a floating gate and a source node of the reference cell transistor 30 , and an intermediate potential between a potential applied when the memory cell selecting transistor 2 is selected and a potential applied when the memory cell selecting transistor 2 is not selected is applied to the gate of the reference cell selecting transistor 8.
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