| 摘要 |
A method of reading data stored in a data storage element of an integrated circuit memory device may include applying a first electrical signal to the data storage element, and while applying the first electrical signal, taking a first measurement of an electrical characteristic of the data storage element. After taking the first measurement of the electrical characteristic, a second electrical signal may be applied to the data storage element with the first and second electrical signals being different. While applying the second electrical signal, a second measurement of the electrical characteristic of the data storage element may be taken, and the first and second measurements of the electrical characteristic of the data storage element may be compared to determine a state of the data stored in the data storage element. Related devices are also discussed. |
