Film producing method for e.g. optic application, involves selectively implanting atomic species via face of wafer for forming implanted zone at predefined depth, and forming protective layer in horizontal walls of step

摘要

The method involves forming a step of predefined height around a periphery of a wafer (30), where the step has a mean thickness which is less than that of the wafer. Atomic species e.g. helium, are selectively implanted through a face (1) of the wafer and not through the step for forming an implanted zone at a predefined implant depth, where the step is defined between the face of the wafer and the implanted zone. A protective layer (36) is formed in horizontal walls of the step with a thick material, where the layer (36) extends on the step. An independent claim is also included for a wafer for providing a film destined to electronic, optic and optronic applications.