| 摘要 |
<p>[PROBLEMS] To provide a method for predicting distribution of impurity concentration in which lateral spreading of impurities can be evaluated when ions are implanted while reducing restrictions. [MEANS FOR SOLVING PROBLEMS] A first evaluation substrate whose direction perpendicular to the surface is specified by a first index, and a second evaluation substrate where the direction specified by the first index is inclining from the normal line direction of the surface are prepared. The first evaluation substrate is implanted with ions from the perpendicular direction. The second evaluation substrate is implanted with ions by using an ion beam parallel with the direction specified by the first index. Distribution of impurity concentration in the depth direction is measured for the first and second evaluation substrates. Based on the distribution of impurity concentration measured for the first and second evaluation substrates, first distribution of impurity concentration on the extension of the ion beam and second distribution of impurity concentration in the direction intersecting the extension perpendicularly are predicted.</p> |
