METHOD OF ROUGHENING NITRIDE CRYSTAL AND METHOD OF FABRICATION NITRIDE LIGHT EMITTING DIODE USING THE SAME

摘要

A method for processing a rough surface of a nitride single crystal is provided to improve surface roughness and change the shape of an etching pit by adding aluminum to a mixture solution of H2PSO4 and H3PO4 as etchant used in a nitride crystal. Etchant in which H2PSO4, H3PO4 and aluminum are mixed is prepared. A roughening treatment is performed by applying the etchant to the surface of a nitride single crystal. In the mixture solution, H2PSO4 and H3PO4 are mixed in a ratio of 1:10 and the content of the aluminum is not less than around 0.1 mole/liter.