| 摘要 |
PROBLEM TO BE SOLVED: To achieve a reduced electric power consumption of a CCD solid-state imaging device. SOLUTION: The CCD solid-state imaging apparatus includes: a photoelectric conversion device; a plurality of first transfer paths (vertical transfer paths) extending in the first direction; and a second transfer path (horizontal transfer path) extending in the second direction, on a surface of a semiconductor 30. The imaging apparatus includes: a plurality of first layer transfer electrode films each discretely formed on the first transfer paths and the second transfer path; and a second layer transfer electrode film formed between the first electrode films with its both ends of the second electrode film laminated to the edge ends of the first electrode film through an insulating film. A thickness (b) of an insulating film 34 between the first layer transfer electrode film 32, and the second layer transfer electrode film 35 constituting the first transfer path shown in Fig. (a) is made thinner than a thickness (a) of an insulating film 37 between the first layer transfer electrode film 32 and the second layer transfer electrode film 35 constituting the second transfer path shown in Fig. (b). COPYRIGHT: (C)2007,JPO&INPIT
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