| 摘要 |
A semiconductor IC(Integrated Circuit) device and a method for manufacturing the same are provided to simplify a Cu line forming process by using a dual-damascene process. A semiconductor element is formed on a main surface of a semiconductor substrate(1). A first metal line is formed on the semiconductor element. A first interlayer dielectric is formed thereon. A first stopper layer is selectively formed on the first interlayer dielectric. A first ARC(Anti-Reflective Coating) and a first photoresist pattern are formed thereon. A first via hole is formed by etching selectively the first ARC, the first interlayer dielectric and the first stopper layer using the first photoresist pattern as an etch mask. A first filler fills the first via hole. A first metal line groove is formed on the resultant structure by etching the first interlayer dielectric using a second photoresist pattern as an etch mask. The second photoresist pattern and the first filler are removed therefrom. A second metal line is formed by filling a metal film in the first metal line groove and the first via hole. The first stopper layer is made of a predetermined material with low light reflectivity, so that the first stopper layer is used as an another ARC. |
